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A low power, good gain flatness SiGe low noise amplifier for 3.1–10.6GHz ultra wide band radio

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5 Author(s)
Shih-Chih Chen ; Department of Optoelectronic Engineering, National Yunlin University of Science & Technology, Taiwan ; Ruey-Lue Wang ; Cheng-Lung Tsai ; Jui-Hao Shang
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This paper presents a full band (3.1 GHz to 10.6 GHz) current-reused low noise amplifier (LNA) for ultra wide band (UWB) system based on the TSMC 0.35 m bipolar silicon-germanium (SiGe) processes. The implemented LNA achieves the gain of 14.3 dB, the noise figure (NF) minimum of 2.5 dB and good input and output matching from 3.1 GHz to 10.6 GHz. The power consumption is only 5.4 mW under a 1.5 supply voltage. By adding a feedback resister in the second stage of the adopted current-reused topology, the gain flatness is less than 0.5 dB in every band group. The circuit occupies an area of 1.33 mm2.

Published in:

2007 50th Midwest Symposium on Circuits and Systems

Date of Conference:

5-8 Aug. 2007