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Comparison of MONOS Memory Device Integrity When Using \hbox {Hf}_{1 - x - y}\hbox {N}_{x}\hbox {O}_{y} Trapping Layers With Different N Compositions

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7 Author(s)
Yang, H.J. ; Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu ; Cheng, C.F. ; Chen, W.B. ; Lin, S.H.
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We have studied the nitrogen composition dependence of the characteristics of Hf1-x-yNxOy/SiO2/Si MONOS memory devices. By increasing the N composition in the Hf1-x-yNxOy trapping layer, both the memory window and high-temperature retention improved. The Hf0.3N0.2O0.5 MONOS device displayed good characteristics in terms of its plusmn9-V program/erase (P/E) voltage, 100-mus P/E speed, large initial 2.8-V memory window, and a ten-year extrapolated retention of 1.8 V at 85degC or 1.5 V at 125degC.

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Electron Devices, IEEE Transactions on  (Volume:55 ,  Issue: 6 )