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Low temperature-stressed aging test of 1.3-1.45 mu m laser diodes under high power operation

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2 Author(s)
Kawai, Y. ; Res. Lab., OKI Electr. Ind. Co. Ltd., Tokyo, Japan ; Yamada, T.

Maximum CW output powers of 380 and 300 mW were obtained from GaInAsP/InP LDs at 1.3 and 1.45 mu m, respectively, at a temperature of -40 degrees C. Temperature-stressed CW aging tests were carried out under high output powers of about 260 mW at 1.3 mu m and 220 mW at 1.45 mu m. The degradation rates of output power were estimated to be less than 3% per 1000 h from the 1600 h aging tests. CW operation has been confirmed under extremely high power operation at low temperature.

Published in:

Electronics Letters  (Volume:26 ,  Issue: 1 )

Date of Publication:

4 Jan. 1990

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