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Effect of Nitrogen on the Frequency Dependence of Dynamic NBTI-Induced Threshold-Voltage Shift of the Ultrathin Oxynitride Gate P-MOSFET

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3 Author(s)
S. Wang ; Nanyang Technol. Univ., Singapore ; Diing Shenp Ang ; G. A. Du

The dynamic negative-bias-temperature-instability- induced threshold-voltage shift |DeltaVt| of p-MOSFETs employing ultrathin decoupled-plasma- and thermal-nitrided SiO2 gate dielectrics is studied as a function of gate frequency. The dependence of |DeltaVt| on the gate frequency under unipolar stress is observed to become weaker for p-MOSFETs having higher nitrogen concentrations in the gate oxide. Evidence shows that reduced frequency dependence results from a greater lock-in of |DeltaVt|, mainly due to an increased generation of recovery-resistant deep-level hole traps in the heavily nitrided gate p-MOSFET.

Published in:

IEEE Electron Device Letters  (Volume:29 ,  Issue: 5 )