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Enhancement-Mode Metamorphic HEMT on GaAs Substrate With 2 S/mm g_{m} and 490 GHz f_{T}

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3 Author(s)
Wonill Ha ; LLC, Thousand Oaks ; Shinohara, K. ; Brar, B.

This letter presents the results of an enhancement mode metamorphic high-electron-mobility transistor device on a GaAs substrate with a 70% indium composition channel. A 35-nm gate length device exhibits a 490-GHz current gain cutoff frequency (fT), a transconductance (gm) of 2 S/mm, a threshold voltage (Vth) of 0.11 V (enhancement mode) and a low on- resistance of 0.37 Omega mm. These attributes make the device well- suited for millimeter-wave circuit applications.

Published in:

Electron Device Letters, IEEE  (Volume:29 ,  Issue: 5 )