Mode shape and failure analysis of high frequency MEMS/NEMS using Raman Spectroscopy

This paper reports on the use of Raman spectroscopy to characterize the motion of high frequency MEMS/NEMS. The change in Raman signal from a device driven into resonance at 101 KHz was used to indicate the mode shape at that frequency and the strain induced during the oscillation. The results are in good agreement with a finite element model of the structure. The results were also used to predict device failure during excessive vibration.