Cart (Loading....) | Create Account
Close category search window
 

Mode shape and failure analysis of high frequency MEMS/NEMS using Raman Spectroscopy

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Hedley, J. ; Sch. of Mech. & Syst. Eng., Newcastle Univ., Newcastle upon Tyne ; Zhongxu Hu ; Arce-Garcia, I. ; Gallacher, B.J.

This paper reports on the use of Raman spectroscopy to characterize the motion of high frequency MEMS/NEMS. The change in Raman signal from a device driven into resonance at 101 KHz was used to indicate the mode shape at that frequency and the strain induced during the oscillation. The results are in good agreement with a finite element model of the structure. The results were also used to predict device failure during excessive vibration.

Published in:

Nano/Micro Engineered and Molecular Systems, 2008. NEMS 2008. 3rd IEEE International Conference on

Date of Conference:

6-9 Jan. 2008

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.