Referenced Items are not available for this document.
The source and drain of pressure MOSFET formed by n+-type polysilicon film is placed over an oxide on p-type crystalline silicon were fabricated and the Piezoresistive Effect of pressure MOSFET was study. The polysilicon film layer was deposited in a plasma enhanced chemical vapor deposition system. Results shown, The new structure of pressure MOSFET can operate at higher temperature than can sensor fabricated in single-crystal silicon, and the polysilicon films deposited at 650degC, source region and drain region with doping concentration of 3.6times1020 cm-3, the best value of thickness should be around 3 mum. The results indicate that for pressure MOSFET shown high-temperature capability makes them especially attractive for automotive application.
Published in:
Nano/Micro Engineered and Molecular Systems, 2008. NEMS 2008. 3rd IEEE International Conference on
Date of Conference: 6-9 Jan. 2008
- Page(s):
- 86 - 89
- E-ISBN :
- 978-1-4244-1908-1
- Print ISBN:
- 978-1-4244-1907-4
- INSPEC Accession Number:
- 9963993
- Conference Location :
- Sanya
- Digital Object Identifier :
- 10.1109/NEMS.2008.4484292
- Product Type:
- Conference Publications
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