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The source and drain of pressure MOSFET formed by n+-type polysilicon film is placed over an oxide on p-type crystalline silicon were fabricated and the Piezoresistive Effect of pressure MOSFET was study. The polysilicon film layer was deposited in a plasma enhanced chemical vapor deposition system. Results shown, The new structure of pressure MOSFET can operate at higher temperature than can sensor fabricated in single-crystal silicon, and the polysilicon films deposited at 650degC, source region and drain region with doping concentration of 3.6times1020 cm-3, the best value of thickness should be around 3 mum. The results indicate that for pressure MOSFET shown high-temperature capability makes them especially attractive for automotive application.
Date of Conference: 6-9 Jan. 2008