By Topic

Wafer-Bonded Silicon Gamma-Ray Detectors

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)

A wafer-bonded silicon power transistor has been shown to function as an x-ray detector. The device consists of two thin device wafers bonded onto either side of a 2 mm-thick high-resistivity silicon wafer. The hydrophobic bonding process was performed at 400deg C. This low temperature wafer bonding technique should enable the development of large-area, position-sensitive detectors, using thick, high-resistivity intrinsic silicon bonded to thin readout wafers fabricated using conventional CMOS technology. These devices should enable fabrication of thicker intrinsic silicon detectors than currently available. Thick, position-sensitive detectors based on double-sided strip detectors and pixellated detectors are possible. To demonstrate this, a 1 mm thick gamma-ray detector was created from two 0.5 mm thick wafers that were patterned with gamma-ray strip detectors. The energy resolution of the detector is 8.9 keV FWHM for 60 keV gamma rays at room temperature with a leakage of 0.9 nA while operating at 700 V and fully depleted. Improvements in the technique should allow for thicker detectors with better energy resolution.

Published in:

Nuclear Science, IEEE Transactions on  (Volume:55 ,  Issue: 2 )