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Resistance effects on field emission for one-dimensional nanostructure grown on silicon substrate: A simulation study using classical transport model

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3 Author(s)
Lan, Yung-Chiang ; Nat. Cheng Kung Univ., Tainan ; Ping-Sang Huang ; Lin, Ming-Chieh

This paper studies the resistance effects on field emission for one-dimensional nanostructure grown on silicon substrate. In this study, the carrier transport model developed in our previous works (Lan et al., 2005) is applied to investigate the resistance effects of the CNT (carbon nanotube) grown on doped silicon substrate.

Published in:
Vacuum Nanoelectronics Conference, 2007. IVNC. IEEE 20th International

Date of Conference: 8-12 July 2007

Page(s):
263 - 264
E-ISBN :
978-1-4244-1134-4
Print ISBN:
978-1-4244-1133-7
INSPEC Accession Number:
9896679
Conference Location :
Chicago, IL
Digital Object Identifier :
10.1109/IVNC.2007.4481023
Product Type:
Conference Publications

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