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In this paper, novel and simple fabrication method of CNT field emitter by means of direct growth of CNT onto tungsten tip by CVD was developed. This method enables a fabrication of a high-quality CNT field emitter with simpler procedures than conventional methods. Aluminum (Al), nickel (Ni) and molybdenum (Mo) films were sequentially deposited onto a W tip with tip radius of ~ 0.1 micrometer. Ni thin film serves as a catalyst for the CNT growth. Al layer is an underlayer that controls granulation of Ni film, which is an important process for the CNT growth.