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Wide-band-gap semiconductors such as indium, tin, molybdenum, and chromium oxides have stimulated considerable attention in recent years as promising cold-cathode materials due to their remarkable physical and chemical stability during the cold electron emission process. Especially, indium oxide (direct band gap : 3.6 eV) can be one of the most attractive conductive oxides for field emission because of its relatively low electron affinity (3.5 eV), high chemical inertness and sputter resistance. We synthesized nano-composite of single-walled carbon nanotube and In2O3. The field-emission behavior was investigated in detail.