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Gate Oxide Thinning Limit Influenced by Gate Materials

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2 Author(s)
Itsumi, Manabu ; Atsugi Electrical Communication Laboratory, NTT Atsugi-shi, Kanagawa, 243-01, Japan ; Muramoto, Susumu

N-type poly Si has no serious influence on thin oxides down to about 30 Å. For a boron-doped poly-Si gate, however, current increase characterized by negative gate bias is found. For an Mo gate, gate oxide surface layer of about 20 Å next to the gate are deteriorated. By minimizing boron diffusion from a boron-doped poly-Si and Mo penetration during Mo gate formation, both gates will be of practical use for thin gate oxide down to near 30 Å.

Published in:

VLSI Technology, 1985. Digest of Technical Papers. Symposium on

Date of Conference:

14-16 May 1985