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Resistive-Feedback CMOS Low-Noise Amplifiers for Multiband Applications

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5 Author(s)
Perumana, B.G. ; Georgia Electron. Design Center, Georgia Inst. of Technol., Atlanta, GA ; Zhan, J.-H.C. ; Taylor, S.S. ; Carlton, B.R.
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Extremely compact resistive-feedback CMOS low-noise amplifiers (LNAs) are presented as a cost-effective alternative to multiple narrowband LNAs using high-Q inductors for multiband wireless applications. Limited linearity and high power consumption of the inductorless resistive-feedback LNAs are analyzed and circuit techniques are proposed to solve these issues. A 12-mW resistive-feedback LNA, based on current-reuse transconductance boosting is presented with a gain of 21 dB and a noise figure (NF) of 2.6 dB at 5 GHz. The LNA achieves an output third-order intercept point (IP3) of 12.3 dBm at 5 GHz by reducing loop-gain rolloff and by improving linearity of individual stages. The active die area of the LNA is only 0.012 mm2. A 9.2-mW tuned resistive-feedback LNA utilizing a single compact low-Q on-chip inductor is presented, showing an improved tradeoff between performance, power consumption, and die area. At 5.5 GHz, the fully integrated LNA achieves a measured gain of 24 dB, an NF of 2 dB, and an output IP3 of 21.5 dBm. The LNA draws 7.7 mA from the 1.2-V supply and has a 3-dB bandwidth of 3.94 GHz (4.04-7.98 GHz). The LNA occupies a die area of 0.022 mm2. Both LNAs are implemented in a 90-nm CMOS process and do not require any costly RF enhancement options.

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Microwave Theory and Techniques, IEEE Transactions on  (Volume:56 ,  Issue: 5 )