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Hybrid Integration of Bandgap Reference Circuits Using Silicon ICs and Germanium Devices

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3 Author(s)
Kim, J.W. ; Stanford Univ., Stanford ; Murmann, B. ; Dutton, R.W.

Low-voltage hybrid silicon-germanium bandgap reference circuits that can defy the voltage scaling limits of those realized in purely silicon-based technologies are implemented. Germanium diodes replace silicon diodes in two conventional bandgap reference circuits fabricated in a 0.18-mum Si CMOS process, and experimental results validate the benefit of exploiting a low bandgap material. The output references are measured as 670 mV and 310 mV with 9.3 mV (287 ppm/degC) and 4.6 mV (302 ppm/degC) variation, respectively, over 5 ~ 56degC. In addition, the high temperature characteristics limiting the operation range related to low bandgap are investigated.

Published in:

Quality Electronic Design, 2008. ISQED 2008. 9th International Symposium on

Date of Conference:

17-19 March 2008