By Topic

Modeling of V_{\rm th} Shift in nand Flash-Memory Cell Device Considering Crosstalk and Short-Channel Effects

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

8 Author(s)

A threshold-voltage (Vth) shift of sub-100-nm NAND flash-memory cell transistors was modeled systematically, and the modeling was verified by comparing with the data from measurement and 3-D device simulation. The Vth shift of the NAND flash-memory cell was investigated by changing parameters such as gate length, width, drain voltage, dielectric material between cells, space between cells, lightly doped-drain depth, and adjacent-cell bias. The proposed model covers two dominant device physics: capacitance coupling effect between adjacent cells and short-channel effect. Our model showed an accurate prediction of the Vth shift of NAND flash-memory array and a good agreement with the data from simulation and measurement.

Published in:

IEEE Transactions on Electron Devices  (Volume:55 ,  Issue: 4 )