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High-performance inversion-type enhancement- mode (E-mode) n-channel In0.65Ga0.35As MOSFETs with atomic-layer-deposited Al2O3 as gate dielectric are demonstrated. A 0.4-mum gate-length MOSFET with an Al2O3 gate oxide thickness of 10 nm shows a gate leakage current that is less than 5 times 10-6 A/cm2 at 4.0-V gate bias, a threshold voltage of 0.4 V, a maximum drain current of 1.05 A/mm, and a transconductance of 350 mS/mm at drain voltage of 2.0 V. The maximum drain current and transconductance scale linearly from 40 mum to 0.7 mum. The peak effective mobility is ~1550 cm2/V ldr s at 0.3 MV/cm and decreases to ~650 cm2/V ldr s at 0.9 MV/cm. The obtained maximum drain current and transconductance are all record-high values in 40 years of E-mode III-V MOSFET research.