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Resistive Memory Switching of \hbox {Cu}_{x}\hbox {O} Films for a Nonvolatile Memory Application

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10 Author(s)
Lv, H.B. ; Fudan Univ., Shanghai ; Yin, M. ; Fu, X.F. ; Song, Y.L.
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Poly crystalline CuxO films produced by plasma oxidation are investigated for nonvolatile memory applications. Reversible bistable resistive switching from a high-resistance state to a low-resistance state, and vice versa, is observed in an integrated Al/CuxO/Cu structure under voltage sweeping. More than 3000 repetitive cycles are observed in 180-mum memory devices with an on/off ratio of ten times. Data testing shows that the devices meet the ten-year retention requirement for the storage of programmed logic signals.

Published in:

Electron Device Letters, IEEE  (Volume:29 ,  Issue: 4 )

Date of Publication:

April 2008

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