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In the present study, we have investigated the electrical and ohmic properties of the screen-printed silver metal contacts formed on the heavily doped n emitter region of the multicrystalline silicon solar cells. It shows that the rapid firing of the silver thick-fllm conductor paste at higher temperature results a preferential etching of the silicon surface by the molten glass-frit, on cooling silver sinters concurrently and forms a nearly perfect metal and the semiconductor contact structure. The ohmic properties of the sintered silver metal contacts were characterized by modified three- point probe method, power loss calculation respectively. The best value of specific contact resistance obtained is 10-4 Omega-cm2 for the Ag metal electrode and p-type mc-Si contact structure. The doping level dependence of the pc with the surface doping concentration (Ns) shows a linear relationship between the pc with the inverse of the square root of the surface doping concentration (Ns -1/2) as suggested by the theory for the heavily doped semiconductor region.