Optical and electrical properties of amorphous CuAlO2 thin film deposited by RF magnetron sputtering

Defects chemistry plays an important role in the origin of p-type conductivity in transparent CuAlO
₂
thin films. CuAlO
₂
thin film was deposited at room temperature by RF magnetron sputtering on glass and silicon substrates. Films were deposited with various O
₂
partial pressures in the Ar+O
₂
atmosphere. UV-Vis spectrophotometric measurement indicated the films were having transparency above 75% in the visible region and the tauc gap was 1.6 eV. The room temperature electrical conductivity of the film was 0.32 S cm
^-1
.