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A 2-D analytical subthreshold model for gate misalignment effects on graded channel DG FD SOI n-MOSFET

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4 Author(s)
Sharma, R.K. ; Semicond. Devices Res. Lab., New Delhi ; Saxena, M. ; Gupta, M. ; Gupta, R.S.

We have presented a two dimensional closed form analytical subthreshold model for graded channel (GC) double gate fully depleted SOI n-MOSFET with gate misalignment effect, using conformal mapping transformation approach. A closed-form compact model, considering the gate misalignment effect in the non-gate overlap region has also been developed.

Published in:

Physics of Semiconductor Devices, 2007. IWPSD 2007. International Workshop on

Date of Conference:

16-20 Dec. 2007

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