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Radiation effects on strain-engineered p-MOSFETs

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5 Author(s)

Effects of heavy ion irradiation on process- induced strained-Si (PSS) p-MOSFETs are studied via simulation. It is shown that for the immediate (short term), irradiation can cause degradation in the transconductance and drain current.

Published in:

Physics of Semiconductor Devices, 2007. IWPSD 2007. International Workshop on

Date of Conference:

16-20 Dec. 2007