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Charge controlling in nanoscale shielded channel DG-MOSFET: A quantum simulation

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3 Author(s)
Dehdashti, N. ; Semnan Univ., Semnan ; Orouji, A.A. ; Faez, R.

Nanoscale Shielded channel transistors are investigated by solving the two-dimensional Poisson equation self-consistently with ballistic quantum transport equations for first time. We present self-consistent solutions of ultrathin body device structures to investigate the effect of electrically shielded channel region which impose charge controlling in the channel region on the characteristics of nanoscale DG-MOSFET. The simulation method is based on nonequlibrium Green's function (NEGF). Starting from a basic structure with a gate length of 10 nm, the effect of gate length variation on the performance of the device has been investigated.

Published in:

Physics of Semiconductor Devices, 2007. IWPSD 2007. International Workshop on

Date of Conference:

16-20 Dec. 2007