Referenced Items are not available for this document.
Nanoscale Shielded channel transistors are investigated by solving the two-dimensional Poisson equation self-consistently with ballistic quantum transport equations for first time. We present self-consistent solutions of ultrathin body device structures to investigate the effect of electrically shielded channel region which impose charge controlling in the channel region on the characteristics of nanoscale DG-MOSFET. The simulation method is based on nonequlibrium Green's function (NEGF). Starting from a basic structure with a gate length of 10 nm, the effect of gate length variation on the performance of the device has been investigated.
Published in:
Physics of Semiconductor Devices, 2007. IWPSD 2007. International Workshop on
Date of Conference: 16-20 Dec. 2007
- Page(s):
- 127 - 129
- E-ISBN :
- 978-1-4244-1728-5
- Print ISBN:
- 978-1-4244-1728-5
- INSPEC Accession Number:
- 9858849
- Conference Location :
- Mumbai
- Digital Object Identifier :
- 10.1109/IWPSD.2007.4472469
- Product Type:
- Conference Publications
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