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High-Efficiency 808-nm InGaAlAs–AlGaAs Double-Quantum-Well Semiconductor Lasers With Asymmetric Waveguide Structures

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7 Author(s)
Lin Li ; Changchun Univ. of Sci. & Technol., Changchun ; Guojun Liu ; Zhanguo Li ; Mei Li
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The InGaAlAs-AlGaAs double-quantum-well semiconductor lasers grown by molecular beam epitaxy show high quantum efficiency and high power conversion efficiency at continuous-wave power output using asymmetric waveguide structures. The threshold current density and slope efficiency of the device are 180 A/cm2 and 1.4 W/A, respectively. The internal loss and the internal quantum efficiency are 1.1 cm-1 and 97%, respectively. The 75% maximum power conversion efficiency is achieved in 100-mum stripe widths 808-nm-emitting laser diodes with 1000-mum cavity length.

Published in:

Photonics Technology Letters, IEEE  (Volume:20 ,  Issue: 8 )