By Topic

Nonlinear Analysis and Structure Optimization of a DAR IMPATT Diode

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Zemliak, A. ; Puebla Autonomous Univ., Puebla ; Cabrera, S. ; Machusskiy, E.

The analysis and optimization of the n+pvnp+ avalanche diode have been realized on basis of the nonlinear model and special optimization procedure. This type of the diode that was named as double avalanche region (DAR) IMPATT diode includes two avalanche regions inside the diode. The admittance and energy characteristics of the DAR diode were analyzed in very wide frequency band from 30 up to 360 GHz and were optimized for the second frequency band near the 220 GHz.

Published in:

Electronics, Communications and Computers, 2008. CONIELECOMP 2008, 18th International Conference on

Date of Conference:

3-5 March 2008