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A New Method to Determine Effective Lateral Doping Abruptness and Spreading-Resistance Components in Nanoscale MOSFETs

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3 Author(s)
Seong-Dong Kim ; IBM Semicond. Res. & Dev. Center, Hopewell Junction ; Narasimha, S. ; Ken Rim

A comprehensive technique for the accurate extraction of the effective lateral doping abruptness and the spreading-resistance components in source/drain extension (EXT) regions is presented by FET on-resistance characterization and physical resistance modeling. The spreading-resistance components under EXT-to-gate overlap, and spacer regions are successfully correlated to the lateral EXT doping abruptness by the relationship between on-resistance and overlap capacitance response measured from 90-nm-node silicon-on-insulator MOSFETs. The accurate determination of lateral doping abruptness is found to be essential for linking the external spreading resistance to intrinsic short-channel device characteristics.

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Electron Devices, IEEE Transactions on  (Volume:55 ,  Issue: 4 )