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Design Techniques of CMOS Ultra-Wide-Band Amplifiers for Multistandard Communications

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3 Author(s)
Tsang, T.K.K. ; McGill Univ., Montreal ; Kuan-Yu Lin ; El-Gamal, M.N.

This paper presents design techniques of CMOS ultra-wide-band (UWB) amplifiers for multistandard communications. The goal of this paper is to propose a compact, simple, and robust topology for UWB low-noise amplifiers, which yet consumes a relatively low power. To achieve this goal, a common-gate amplifier topology with a local feedback is employed. The first amplifier uses a simple inductive peaking technique for bandwidth extension, while the second design utilizes a two-stage approach with an added gain control feature. Both amplifiers achieve a flat bandwidth of more than 6 GHz and a gain of higher than 10 dB with supply voltages of 1.8-2.5 V. Designs with different metal thicknesses are compared. The advantage of using thick-metal inductors in UWB applications depends on the chosen topology.

Published in:

Circuits and Systems II: Express Briefs, IEEE Transactions on  (Volume:55 ,  Issue: 3 )

Date of Publication:

March 2008

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