By Topic

Design Techniques of CMOS Ultra-Wide-Band Amplifiers for Multistandard Communications

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Tsang, T.K.K. ; McGill Univ., Montreal ; Kuan-Yu Lin ; El-Gamal, M.N.

This paper presents design techniques of CMOS ultra-wide-band (UWB) amplifiers for multistandard communications. The goal of this paper is to propose a compact, simple, and robust topology for UWB low-noise amplifiers, which yet consumes a relatively low power. To achieve this goal, a common-gate amplifier topology with a local feedback is employed. The first amplifier uses a simple inductive peaking technique for bandwidth extension, while the second design utilizes a two-stage approach with an added gain control feature. Both amplifiers achieve a flat bandwidth of more than 6 GHz and a gain of higher than 10 dB with supply voltages of 1.8-2.5 V. Designs with different metal thicknesses are compared. The advantage of using thick-metal inductors in UWB applications depends on the chosen topology.

Published in:

Circuits and Systems II: Express Briefs, IEEE Transactions on  (Volume:55 ,  Issue: 3 )