By Topic

SRAM stability analysis considering gate oxide SBD, NBTI and HCI

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Jin Qin ; Reliability Engineering, University of Maryland, College Park, MD 20742, USA ; Xiaojun Li ; Joseph B. Bernstein

For ultrathin gate oxide, soft breakdown (SBD) has been extensively studied but not fully integrated into circuit reliability simulation. Using a 6T SRAM cell as a generic circuit example, the time-dependent SBD was incorporated into circuit degradation analysis based on the exponential defect current growth model [1]. SRAM cell stability degradation due to individual failure mechanism was characterized. Multiple failure mechanisms degradation effect was also studied in regard of SRAM cell operation. Simulation results showed that gate oxide SBD is the dominating failure mechanism which causes SRAM stability and operation degradation, NBTI and HCI have much less effect.

Published in:

2007 IEEE International Integrated Reliability Workshop Final Report

Date of Conference:

15-18 Oct. 2007