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Effect of Al Composition and Gate Recess on Power Performance of AlGaN/GaN High-Electron Mobility Transistors

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9 Author(s)
Pei, Y. ; Univ. of California, Santa Barbara ; Chu, R. ; Shen, L. ; Fichtenbaum, N.A.
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AlGaN/GaN high-electron mobility transistors with different Al compositions and barrier thicknesses were compared. The samples with higher Al composition and similar 2D electron gas density showed higher gate leakage, utilizing a slant field plate gate process. By applying a gate recess etch and a slant field plate gate process, gate leakage was improved to a similar level for all the devices, and the power density and PAE were much improved.

Published in:

Electron Device Letters, IEEE  (Volume:29 ,  Issue: 4 )

Date of Publication:

April 2008

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