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Rapid thermal processing (RTP) of silicon using transient linearly ramped-temperature saw-toothed and triangular thermal cycles has been evaluated by characterization of the process uniformity and slip dislocation line patterns for a wide range of process parameters. Rapid thermal oxidation was chosen as the process vehicle for these studies. The process uniformity and slip dislocation line patterns are strongly affected by both the transient and steady-state segments of the thermal cycles. The strong dependencies of the process uniformity and slip dislocation lines on the thermal cycle parameters suggest that the overall performance of a RTP reactor must be specified not only under steady-state thermal conditions, but also for controlled transient thermal cycles. Transient ramped-temperature RTP cycles with medium-to-high peak process temperatures (i.e.