Skip to Main Content
The improvements of resonance characteristics of ZnO-based film bulk acoustic-wave resonator (FBAR) devices operating at 2.5 GHz are presented for the first time. Because of thermal annealing processes, the resonance characteristics could be significantly improved. At about 2.5 GHz, excellent resonance characteristics are observed in terms of good return loss and high quality factor.
Date of Publication: Feb. 28 2008