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High-Performance Focal Plane Array Based on InAs–GaSb Superlattices With a 10- \mu{\hbox {m}} Cutoff Wavelength

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4 Author(s)
Delaunay, P.-Y. ; Center for Quantum Devices, Northwestern Univ., Evanston, IL ; Nguyen, Binh Minh ; Hoffman, D. ; Razeghi, M.

We report on the demonstration of a focal plane array based on Type-II InAs-GaSb superlattices grown on n-type GaSb substrate with a 50% cutoff wavelength at 10 mum. The surface leakage occurring after flip-chip bonding and underfill in the Type-II devices was suppressed using a double heterostructure design. The R0A of diodes passivated with SiO2 was 23 Omegamiddotcm2 after underfill. A focal plane array hybridized to an Indigo readout integrated circuit demonstrated a noise equivalent temperature difference of 33 mK at 81 K, with an integration time of 0.23 ms.

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Quantum Electronics, IEEE Journal of  (Volume:44 ,  Issue: 5 )