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Temperature-Dependent Characterization of AlGaN/GaN HEMTs: Thermal and Source/Drain Resistances

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7 Author(s)
Menozzi, R. ; Dept. of Inf. Technol., Univ. of Parma, Parma ; Umana-Membreno, G.A. ; Nener, B.D. ; Parish, G.
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This paper shows the application of simple dc techniques to the temperature-dependent characterization of AlGaN/ GaN HEMTs in terms of the following: 1) thermal resistance and 2) ohmic series resistance (at low drain bias). Despite their simplicity, these measurement techniques are shown to give valuable information about the device behavior over a wide range of ambient/channel temperatures. The experimental results are validated by comparison with independent measurements and numerical simulations.

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Device and Materials Reliability, IEEE Transactions on  (Volume:8 ,  Issue: 2 )