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Switching Characteristics of GaN HFETs in a Half Bridge Package for High Temperature Applications

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4 Author(s)
Nomura, T. ; FurukawaElectric Co. Ltd., Yokohama ; Masuda, M. ; Ikeda, N. ; Yoshida, S.

AlGaN/GaN heterojunction field effect transistors (HFETs) are expected to be a good candidate for power switching application at high temperatures. We designed and fabricated a discrete HFET package and a half bridge module using the AlGaN/GaN HFETs and SiC Schottky barrier diodes (SBDs) for high temperature applications. The half bridge module exhibited good reliability after 250 C and 400 h high temperature storage. Switching characteristics of the AlGaN/GaN HFET were investigated. Qg x Ron, which shows a figure of merit of switching operation, was more than 10 times better than commercial Si MOSFETs. The switching characteristics of the HFET showed no significant degradation up to 225 C.

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Power Electronics, IEEE Transactions on  (Volume:23 ,  Issue: 2 )