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Avalanche Noise Characteristics in Submicron InP Diodes

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4 Author(s)
Tan, L.J.J. ; Univ. of Sheffield, Sheffield ; Ng, J.S. ; Tan, C.H. ; David, J.P.R.

We report excess noise factors measured on a series of InP diodes with varying avalanche region thickness, covering a wide electric field range from 180 to 850 kV/cm. The increased significance of dead space in diodes with thin avalanche region thickness decreases the excess noise. An excess noise factor of F = 3.5 at multiplication factor M = 10 was measured, the lowest value reported so far for InP. The electric field dependence of impact ionization coefficients and threshold energies in InP have been determined using a non-local model to take into account the dead space effects. This work suggests that further optimization of InP separate absorption multiplication avalanche photodiodes (SAM APDs) could result in a noise performance comparable to InAlAs SAM APDs.

Published in:

Quantum Electronics, IEEE Journal of  (Volume:44 ,  Issue: 4 )

Date of Publication:

April 2008

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