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The topography of patterned resist surface such as line edge roughness (LER) or line width roughness (LWR) has become a serious problem in device manufacturing as the minimum feature size is reduced. LER has been reported to correlate with latent images. Using a simulation based on the reaction mechanisms of chemically amplified resists, the differences in latent image formation in high-and low-activation-energy-type resists was investigated. The aerial image of EUV (intensity distribution) is assumed to be a sine function and using the initial acid distribution as a boundary condition, the deprotection reactions were simulated.