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Environmental-Friendship Etching Process of Low-k SiOCH Films Employing an Alternative Fluorocarbon Gas

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3 Author(s)
Shibata, E. ; Nagoya Univ., Nagoya ; Okamoto, H. ; Hori, M.

We have proposed a novel etching gas C5F10O of which global warming potential would be less than 50, for the plasma etching of SiOCH. The etching was performed using a dual frequency capacitively coupled plasma (CCP). The high performances of a high etching rate and a high selectivity over resist films were obtained. The C5F10O gas produced many CF3 + ions which have a large etching yield due to its special molecular structure and the deposition of polymers was decreased by addition of the N2 gas. Consequentially, the Ar/C5F10O/N2 plasmas have a great potential for realizing a higher etch rate of 980 nm/min and a high etching selectivity over resist of about 7 than the Ar/C4F8/N2 plasmas.

Published in:

Microprocesses and Nanotechnology, 2007 Digest of papers

Date of Conference:

5-8 Nov. 2007