Referenced Items are not available for this document.
Shallow n+/p Junction Formation using PH
This paper discusses the formation of n-type shallow junctions using PH3 plasma doping technique. Shallow n+/p junctions are examined by secondary ion mass spectrometer (SIMS), transmission electron microscopy (TEM), double crystal X-ray diffraction (DXRD) and 4-point probe analysis methods. Measured doping profiles reveal that the junction depth less than 300 Aring and minimum sheet resistance of 104.1 Omega/I are feasible.
Published in:
Microprocesses and Nanotechnology, 2007 Digest of papers
Date of Conference: 5-8 Nov. 2007
- Page(s):
- 186 - 187
- Print ISBN:
- 978-4-9902472-4-9
- INSPEC Accession Number:
- 9777593
- Conference Location :
- Kyoto
- Digital Object Identifier :
- 10.1109/IMNC.2007.4456166
- Product Type:
- Conference Publications
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