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This paper discusses the formation of n-type shallow junctions using PH3 plasma doping technique. Shallow n+/p junctions are examined by secondary ion mass spectrometer (SIMS), transmission electron microscopy (TEM), double crystal X-ray diffraction (DXRD) and 4-point probe analysis methods. Measured doping profiles reveal that the junction depth less than 300 Aring and minimum sheet resistance of 104.1 Omega/I are feasible.
Microprocesses and Nanotechnology, 2007 Digest of papers
Date of Conference: 5-8 Nov. 2007