Shallow n+/p Junction Formation using PH3 Plasma Doping Technique

This paper discusses the formation of n-type shallow junctions using PH
₃
plasma doping technique. Shallow n
⁺
/p junctions are examined by secondary ion mass spectrometer (SIMS), transmission electron microscopy (TEM), double crystal X-ray diffraction (DXRD) and 4-point probe analysis methods. Measured doping profiles reveal that the junction depth less than 300 Aring and minimum sheet resistance of 104.1 Omega/I are feasible.