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Collection field dependence of charging-up of insulators in low voltage scanning electron microscope

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3 Author(s)
Takeshi Maekawa ; Dept. of EIC Eng., Osaka Inst. Tech., 5-16-1, Omiya, Asahi-ku, Osaka, Japan. Phone:+81-6-6954-4306, Fax:+81-6-6957-2136, E-mail: m1107329@eng.oit.ac.jp ; Hiroyuki Tanaka ; Masatoshi Kotera

We have studied time dependent charging of insulators by electron beam irradiation. The positive charging at low voltage SEM is caused by the fact that total SE yield is above unity, but the yield decreases toward unity to maintain the charge balance. To discuss the effect we have calculated the charge accumulation by electron beam with a Monte Carlo simulation of electron trajectories in an insulator.

Published in:

Microprocesses and Nanotechnology, 2007 Digest of papers

Date of Conference:

5-8 Nov. 2007