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DICE: A Beneficial Short-Channel Effect in Nanoscale Double-Gate MOSFETs

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2 Author(s)
Chouksey, S. ; Univ. of Florida, Gainesville ; Fossum, J.G.

Physics-based compact modeling, supported by numerical simulations, is used to show the significance of "drain-induced charge enhancement" (DICE) in nanoscale double-gate (DG) MOSFETs. DICE, which is the strong-inversion counterpart of drain-induced barrier lowering (DIBL), is shown to significantly benefit drive current, without affecting the gate capacitance much, and hence can improve nanoscale DG CMOS speed substantially.

Published in:

Electron Devices, IEEE Transactions on  (Volume:55 ,  Issue: 3 )

Date of Publication:

March 2008

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