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High-Work-Function Ir/HfLaO {\rm p} -MOSFETs Using Low-Temperature-Processed Shallow Junction

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6 Author(s)
Cheng, C.F. ; Nat. Chiao Tung Univ., Hsinchu ; Wu, C.H. ; Su, N.C. ; Wang, S.J.
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We report a high effective work function (Phim-eff) and a very low Vt Ir gate on HfLaO p-MOSFETs using novel self-aligned low-temperature shallow junctions. This gate-first process has shallow junctions of 9.6 or 20 nm that are formed by solid phase diffusion using SiO2-covered Ga or Ni/Ga. At 1.2-nm effective oxide thickness, good Phim-eff of 5.3 eV, low Vt of +0.05 V, high mobility of 90 cm2/V-s at -0.3 MV/cm, and small 85degC negative bias-temperature instability (NBTI) of 20 mV (10 MV/cm for 1 h) are measured for Ir/HfLaO p-MOSFETs.

Published in:

Electron Devices, IEEE Transactions on  (Volume:55 ,  Issue: 3 )

Date of Publication:

March 2008

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