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The inhomogeneity of Schottky-barrier (SB) height PhiB is found to strongly affect the threshold voltage Vth of SB-MOSFETs fabricated in ultrathin body silicon-on-insulator (SOI). The magnitude of this influence is dependent on gate oxide thickness tOX and SOI body thickness; the contribution of inhomogeneity to the Vth variation becomes less pronounced with smaller tOX and/or larger tsi . Moreover, an enhanced Vth variation is observed for devices with dopant segregation used for reduction of the effective PhiB . Furthermore, a multigate structure is found to help suppress the Vth variation by improving carrier injection through reduction of its sensitivity to the PhiB inhomogeneity. A new method for extraction of PhiB from room temperature transfer characteristics is also presented.