Referenced Items are not available for this document.
This letter reports a passively temperature-compensated CMOS oscillator utilizing a film bulk acoustic resonator. The resonator exhibiting an f ldr Q product of 2-4 X 1012 s-1 is composed of molybdenum, aluminum nitride, and a compensation material that has a positive temperature coefficient of Young's modulus. The 604-MHz oscillator consumes 5.3 mW from a 3.3-V supply and achieves excellent phase noise performances of -102, -130, and -149 dBc/Hz at 1, 10, and 100 kHz carrier offsets, respectively. The oscillator's temperature-dependent frequency drift is less than 80 ppm over a temperature range of -35degC to +85degC.
Published in:
Electron Device Letters, IEEE
(Volume:29
,
Issue:
4
)
Date of Publication: April 2008
- Page(s):
- 315 - 318
- ISSN :
- 0741-3106
- INSPEC Accession Number:
- 9920470
- Digital Object Identifier :
- 10.1109/LED.2008.917116
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 21 March 2008
- Issue Date :
- April 2008
- Sponsored by :
- IEEE Electron Devices Society
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