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This paper addresses the problem of turn on performances of an insulated gate bipolar transistor (IGBT) that works in hard switching conditions. The IGBT turn on dynamics with an inductive load is described, and corresponding IGBT turn on losses and reverse recovery current of the associated freewheeling diode are analysed. A new IGBT gate driver based on feed-forward control of the gate emitter voltage is presented in the paper. In contrast to the widely used conventional gate drivers, which have no capability for switching dynamics optimisation, the proposed gate driver provides robust and simple control and optimization of the reverse recovery current and turn on losses. The collector current slope and reverse recovery current are controlled by means of the gate emitter voltage control in feed-forward manner. In addition the collector emitter voltage slope is controlled during the voltage falling phase by means of inherent increase of the gate current. Therefore, the collector emitter voltage tail and the total turn on losses are significantly reduced. The proposed gate driver was experimentally verified and compared to a conventional gate driver, and the results are presented and discussed in the paper.