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High Quality Factor with Fundamental Resonant Mode near the Bandedge of GaN Triangular Submicron Laser Cavity

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6 Author(s)
C. -M. Lai ; Department of Electronic Engineering, Ming Chuan University, Taoyuan 333, Taiwan, R. O. C. Tel: 886-3-3507001 ext 3548; ; H. -M Wu ; P. -C. Huang ; B. -C. Yeh
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Optically-pumped, single-mode stimulated emission was observed on GaN triangular submicron-cavity bounded by {10-10} facets. FDTD analysis indicates a high-Q factor (103) resultant from material's dispersion effect near the bandedge.

Published in:

2007 Conference on Lasers and Electro-Optics (CLEO)

Date of Conference:

6-11 May 2007