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Modeling of the distributed gate RC effect in MOSFET's

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2 Author(s)
Lee-Sup Kim ; Center for Integrated Syst., Stanford Univ., CA, USA ; Dutton, R.W.

Scattering parameters of wide MOSFET devices have been measured at the wafer level in the frequency range up to 1 GHz. These scattering parameters are converted to Y-parameters for device characterization and compared with SPICE simulations of L-, Π-, and T-ladder distributed RC circuits taking into account the effect of distributed gates. Good experimental agreement shows that this effect can be modeled appropriately by multisection RC ladders, especially T-ladder circuits. Differences among ladder circuits in modeling this effect are discussed qualitatively

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Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on  (Volume:8 ,  Issue: 12 )