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Monothically Integrated Long-Wavelength Tunable Photodetector

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9 Author(s)
Lv, Jihe ; Beijing Univ. of Post & Telecommun., Beijing ; Hui Huang ; Xiaomin Ren ; Ang Miao
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This paper demonstrated a tunable long-wavelength photodetector by using the heteroepitaxy growth of InP-In0.53Ga0.47As-InP p-i-n structure on a GaAs-based GaAs/AlAs Fabry-Perot filter structure. High-quality heteroepitaxy was realized by employing a thin low-temperature buffer layer. A wavelength tuning range of 10.0 nm, an external quantum efficiency of about 23%, a spectral linewidth of 0.8 nm, and a 3-dB bandwidth of 6.2 GHz were simultaneously obtained in the device.

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Lightwave Technology, Journal of  (Volume:26 ,  Issue: 3 )