By Topic

Monothically Integrated Long-Wavelength Tunable Photodetector

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

9 Author(s)
Jihe Lv ; Beijing Univ. of Post & Telecommun., Beijing ; Hui Huang ; Xiaomin Ren ; Ang Miao
more authors

This paper demonstrated a tunable long-wavelength photodetector by using the heteroepitaxy growth of InP-In0.53Ga0.47As-InP p-i-n structure on a GaAs-based GaAs/AlAs Fabry-Perot filter structure. High-quality heteroepitaxy was realized by employing a thin low-temperature buffer layer. A wavelength tuning range of 10.0 nm, an external quantum efficiency of about 23%, a spectral linewidth of 0.8 nm, and a 3-dB bandwidth of 6.2 GHz were simultaneously obtained in the device.

Published in:

Journal of Lightwave Technology  (Volume:26 ,  Issue: 3 )