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Mis-matching characteristics study of P+-poly-silicon resistor in newly CMOS process technology

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11 Author(s)
Ho, Y.S. ; Nat. Kaohsiung Univ. of Appl. Sci., Kaohsiung ; Hsu, Y.L. ; Lan, C.C. ; Tsai, Y.J.
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The width dependence to the interfacial effect of mis-matching characteristics of a boron doped non-silicided polysilicon resistor has been studied. The fundamental properties for using P+ poly resistor in the integrated circuit(IC) design are better linearity and higher unit square sheet resistance. Typically, the square resistance of a boron doped non-silicided poly-silicon resistors is 30 times higher than the one of a silicided poly-silicon resistor. By using the 0.18 mum CMOS fabrication technology, the boron doped P+-poly-silicon resistor is built in this paper. Based on a simple and useful empirical model, the equivalent circuit parameters of the P+ poly-silicon resistor that include bulk sheet resistance (Rs), interface resistance (Rinterface) silicide resistance (Rinterface) and contact resistance (Rc) are obtained as described in the research on references. The references' study already showed that the Rs and Rinterface values are increased with the decrease of resistor width and are decreased with the increase of temperature, respectively. However, most of analog related designs, such as ADC (analog to digital converter) and DAC (digital to analog converter) have to use the resistor with large device size in the integrated circuit design for obtaining better circuit performance such as resolution and accuracy during signal conversion. This research is firstly to disclose the P+-poly resistor mis-matching effects by distinguishing the role of each equivalent circuit parameters, and explain the limiting factor to use P+-poly silicon resistor in terms of device sizes, such as width and length, and provide a minimum size of P+ poly resistor to use for the circuit designer. Besides focusing on the dimension variation for the width and length of the resistor to mis-matching performance, the interface effect of the P+-poly-silicon resistor itself is demonstrated 60% higher than the other effect for the study of this work.

Published in:

Electron Devices and Solid-State Circuits, 2007. EDSSC 2007. IEEE Conference on

Date of Conference:

20-22 Dec. 2007