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Design of voltage control oscillator for 5.2 GHz in 0.35 μm SiGe BiCMOS technology

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3 Author(s)
Wen-Shan Chen ; Department of Electronic Engineering, the Southern Taiwan University, Tainan, Taiwan, R.O.C., E-mail: chenws@eecs.stut.edu.tw ; Hsin-Yen Hsieh ; Chi-Huang Lin

This paper presents the design and the exploratory measurements of a fully integrated VCO for 5.2 GHz applications. The presented circuit is implemented in 0.35 μm SiGe BiCMOS technology from TSMC. The current drawn from 2.5 V is 19mA for the VCO. It has a tuning range of 900 MHz with a control voltage from 0 to 2 V. The measured phase noise is -108.6 dBc/Hz at 1 MHz offset from the 5.2 GHz, and a figure of merit of-166.15 dBc/Hz were obtained. The measured output power at 5.2 GHz are -18.8 dBm.

Published in:

Electron Devices and Solid-State Circuits, 2007. EDSSC 2007. IEEE Conference on

Date of Conference:

20-22 Dec. 2007