By Topic

Design of voltage control oscillator for 5.2 GHz in 0.35 μm SiGe BiCMOS technology

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Wen-Shan Chen ; Department of Electronic Engineering, the Southern Taiwan University, Tainan, Taiwan, R.O.C., E-mail: ; Hsin-Yen Hsieh ; Chi-Huang Lin

This paper presents the design and the exploratory measurements of a fully integrated VCO for 5.2 GHz applications. The presented circuit is implemented in 0.35 μm SiGe BiCMOS technology from TSMC. The current drawn from 2.5 V is 19mA for the VCO. It has a tuning range of 900 MHz with a control voltage from 0 to 2 V. The measured phase noise is -108.6 dBc/Hz at 1 MHz offset from the 5.2 GHz, and a figure of merit of-166.15 dBc/Hz were obtained. The measured output power at 5.2 GHz are -18.8 dBm.

Published in:

Electron Devices and Solid-State Circuits, 2007. EDSSC 2007. IEEE Conference on

Date of Conference:

20-22 Dec. 2007