By Topic

Fabrication and study of low temperature polycrystalline silicon TFT technology applied to step doping LIGBT

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Jyh-Ling Lin ; Department of Electronic Engineering, Hua Fan University, No. 1 Hua Fan RD., Shihtin Hsiang, Taipei County, Taiwan, R.O.C, ; Huang-Jen Chen

Thin film transistor lateral insulated gate bipolar transistors (TFT-LIGBTs) were fabricated combining the technology of thin film transistor and the power structure used excimer laser anneal in this paper. Excimer laser anneal and substrate heating at 400degC simultaneously for TFT-LIGBT to integrate with the driving circuit of system-on-panel (SOP) and other circuit in the future. The maximum breakdown voltage of step doping TFT-LIGBT after excimer laser annealing is 280 V with Ldrift=35 mum. The ON/OFF current ratio is 1.59times106. It is higher than solid phase crystallization (SPC)-LIGBT 1.74 about 106 times at Vanode=30 V with Ldrift=35 mum and even more than TFT-LDMOS 1.42times105 10 times.

Published in:

Electron Devices and Solid-State Circuits, 2007. EDSSC 2007. IEEE Conference on

Date of Conference:

20-22 Dec. 2007